IRFS3806TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

47 ns

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Lead Free :

Lead Free

Width :

9.65mm

Rds On (Max) @ Id, Vgs :

15.8m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

JESD-30 Code :

R-PSSO-G2

Published :

2008

Radiation Hardening :

No

Power Dissipation-Max :

71W Tc

Continuous Drain Current (ID) :

43A

ECCN Code :

EAR99

Length :

10.668mm

Rise Time :

40ns

Power Dissipation :

71W

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Height :

4.826mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

49 ns

Turn On Delay Time :

6.3 ns

Number of Elements :

1

Number of Pins :

3

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 50V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Series :

HEXFET®

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

4V @ 50μA