IRFS3806PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Turn On Delay Time :

6.3 ns

Height :

4.826mm

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Recovery Time :

33 ns

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 50V

FET Type :

N-Channel

Published :

2007

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

43A

Case Connection :

DRAIN

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

JESD-609 Code :

e3

Element Configuration :

Single

Number of Terminations :

2

Length :

10.668mm

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Vgs (Max) :

±20V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Width :

9.65mm

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

49 ns

Transistor Element Material :

SILICON

Power Dissipation-Max :

71W Tc

Vgs(th) (Max) @ Id :

4V @ 50μA

Rise Time :

40ns

Contact Plating :

Tin

Power Dissipation :

71W

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

47 ns

Rds On (Max) @ Id, Vgs :

15.8m Ω @ 25A, 10V