IRFS3607TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Turn On Delay Time :

16 ns

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Fall Time (Typ) :

96 ns

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Terminal Form :

Gull wing

Mount :

Surface Mount

Rise Time :

110ns

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

43 ns

Length :

10.668mm

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Pins :

3

Case Connection :

DRAIN

Height :

4.826mm

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.009Ohm

Mounting Type :

Surface Mount

FET Type :

N-Channel

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

75V

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Width :

9.65mm

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

140W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Power Dissipation-Max :

140W Tc

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 100µA

Element Configuration :

Single