IRFS3607PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Radiation Hardening :

No

Turn On Delay Time :

16 ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Length :

10.668mm

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Nominal Vgs :

4 V

Number of Pins :

3

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

75V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

80A

Vgs(th) (Max) @ Id :

4V @ 100µA

Series :

HEXFET®

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Vgs (Max) :

±20V

Fall Time (Typ) :

96 ns

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Dual Supply Voltage :

75V

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Mounting Type :

Surface Mount

Rise Time :

110ns

Power Dissipation-Max :

140W Tc

Height :

4.826mm

Published :

2008

Turn-Off Delay Time :

43 ns

Power Dissipation :

140W

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Recovery Time :

50 ns

Mount :

Surface Mount

Termination :

SMD/SMT

Width :

9.65mm

Number of Elements :

1