IRFS350A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Packaging :

Tube

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

2.78pF @ 25V

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

1134 mJ

Drain Current-Max (Abs) (ID) :

11.5A

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.3Ohm

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

92W Tc

DS Breakdown Voltage-Min :

400V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

68A

Gate Charge (Qg) (Max) @ Vgs :

131nC @ 10V

Surface Mount :

No

Mounting Type :

Through Hole

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

300m Ω @ 5.75A, 10V

Package / Case :

TO-3P-3 Full Pack

Peak Reflow Temperature (Cel) :

Not Applicable

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

400V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated