IRFS3507

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

75V

Terminal Form :

Gull wing

Power Dissipation-Max :

190W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3540pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 100µA

Avalanche Energy Rating (Eas) :

280 mJ

Terminal Position :

Single

Surface Mount :

yes

Number of Elements :

1

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

75A

Terminal Finish :

MATTE TIN OVER NICKEL

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2006

Drain to Source Voltage (Vdss) :

75V

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Pulsed Drain Current-Max (IDM) :

390A

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 58A, 10V

Drain-source On Resistance-Max :

0.0088Ohm

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN