IRFS33N15DPBF
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- Mfr.Part #
- IRFS33N15DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 33A D2PAK
- Stock
- 1,248
- In Stock ：
- 1,248
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Power Dissipation-Max :
- 3.8W Ta 170W Tc
- Turn On Delay Time :
- 13 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2004
- Fall Time (Typ) :
- 21 ns
- Rise Time :
- 38ns
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 20A, 10V
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Turn-Off Delay Time :
- 23 ns
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 56mOhm
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- Voltage - Rated DC :
- 150V
- Width :
- 9.65mm
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Power Dissipation :
- 3.8W
- Current Rating :
- 33A
- Continuous Drain Current (ID) :
- 33A
- Length :
- 10.668mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2020pF @ 25V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 150V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Height :
- 4.699mm
- Datasheets
- IRFS33N15DPBF
N-Channel Tube 56m Ω @ 20A, 10V ±30V 2020pF @ 25V 90nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS33N15DPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2020pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 33A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFS33N15DPBF Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 23 ns
IRFS33N15DPBF Applications
There are a lot of Infineon Technologies
IRFS33N15DPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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