IRFS33N15D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

JESD-609 Code :

e0

Rds On (Max) @ Id, Vgs :

56m Ω @ 20A, 10V

Power Dissipation-Max :

3.8W Ta 170W Tc

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

225

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

Drain to Source Voltage (Vdss) :

150V

Drain Current-Max (Abs) (ID) :

33A

Drain-source On Resistance-Max :

0.056Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

330 mJ

Series :

HEXFET®

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Number of Terminations :

2

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Terminal Form :

Gull wing

Number of Elements :

1

Case Connection :

DRAIN

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

130A

FET Type :

N-Channel

Packaging :

Tube

Terminal Finish :

Tin/Lead (Sn/Pb)

DS Breakdown Voltage-Min :

150V

Published :

2000