IRFS3307ZTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

75V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 75A, 10V

Vgs (Max) :

±20V

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 150μA

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Element Configuration :

Single

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 50V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

64ns

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

480A

Continuous Drain Current (ID) :

120A

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

230W Tc

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

230W

Transistor Application :

SWITCHING

Fall Time (Typ) :

65 ns

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0058ohm

Published :

2004

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Number of Elements :

1

Number of Terminations :

2

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB