IRFS3307ZTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

140 mJ

Published :

2006

Width :

9.652mm

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 75A, 10V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

230W

Mounting Type :

Surface Mount

Length :

10.668mm

Transistor Application :

SWITCHING

Rise Time :

64ns

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

480A

Case Connection :

DRAIN

Turn On Delay Time :

26 ns

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 50V

Fall Time (Typ) :

65 ns

Transistor Element Material :

SILICON

Number of Elements :

1

Drain to Source Breakdown Voltage :

75V

Height :

4.572mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain-source On Resistance-Max :

0.0058ohm

Qualification Status :

Not Qualified

FET Type :

N-Channel

Turn-Off Delay Time :

51 ns

Vgs(th) (Max) @ Id :

4V @ 150μA

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

230W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

120A