IRFS3307ZPBF
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- Mfr.Part #
- IRFS3307ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A D2PAK
- Stock
- 8,316
- In Stock ：
- 8,316
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 75A, 10V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Recovery Time :
- 50 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Power Dissipation :
- 230W
- Series :
- HEXFET®
- Mounting Type :
- Surface Mount
- Termination :
- SMD/SMT
- Rise Time :
- 64ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 230W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Drain to Source Breakdown Voltage :
- 75V
- Threshold Voltage :
- 4V
- Length :
- 6.73mm
- Width :
- 6.22mm
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 65 ns
- Turn On Delay Time :
- 15 ns
- Turn-Off Delay Time :
- 38 ns
- Height :
- 2.39mm
- Nominal Vgs :
- 4 V
- Resistance :
- 5.8mOhm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Dual Supply Voltage :
- 75V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 4750pF @ 50V
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 75V
- Element Configuration :
- Single
- Current Rating :
- 120A
- Continuous Drain Current (ID) :
- 120A
- Datasheets
- IRFS3307ZPBF
N-Channel Tube 5.8m Ω @ 75A, 10V ±20V 4750pF @ 50V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS3307ZPBF Overview
The maximum input capacitance of this device is 4750pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 120A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFS3307ZPBF Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 38 ns
a threshold voltage of 4V
IRFS3307ZPBF Applications
There are a lot of Infineon Technologies
IRFS3307ZPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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