IRFS3307PBF
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- Mfr.Part #
- IRFS3307PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A D2PAK
- Stock
- 913
- In Stock ：
- 913
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 63 ns
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 130A
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Element Configuration :
- Single
- Published :
- 2006
- Length :
- 10.668mm
- Height :
- 4.572mm
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 9.65mm
- Resistance :
- 6.2mOhm
- Turn-Off Delay Time :
- 51 ns
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 75V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5150pF @ 50V
- Number of Elements :
- 1
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 6.3m Ω @ 75A, 10V
- Turn On Delay Time :
- 26 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HEXFET®
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 200W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Vgs (Max) :
- ±20V
- Rise Time :
- 120ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Power Dissipation :
- 200W
- Mounting Type :
- Surface Mount
- Datasheets
- IRFS3307PBF
N-Channel Tube 6.3m Ω @ 75A, 10V ±20V 5150pF @ 50V 180nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS3307PBF Overview
The maximum input capacitance of this device is 5150pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 130A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 51 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 26 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IRFS3307PBF Features
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 51 ns
IRFS3307PBF Applications
There are a lot of Infineon Technologies
IRFS3307PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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