IRFS3306TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

15 ns

Supplier Device Package :

D2PAK

Height :

4.826mm

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Rds On Max :

4.2 mΩ

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Element Configuration :

Single

Radiation Hardening :

No

Number of Elements :

1

Power Dissipation-Max :

230W Tc

Drain to Source Voltage (Vdss) :

60V

Threshold Voltage :

4V

Length :

10.668mm

Published :

2005

Vgs(th) (Max) @ Id :

4V @ 150μA

Power Dissipation :

230W

Drain to Source Resistance :

4.2mOhm

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

4.2mOhm @ 75A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

77 ns

Continuous Drain Current (ID) :

120A

Width :

9.65mm

Vgs (Max) :

±20V

Turn-Off Delay Time :

40 ns

Number of Pins :

3

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Max Operating Temperature :

175°C

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

4.52nF

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Rise Time :

46ns

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®