IRFS3207ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

75V

Vgs(th) (Max) @ Id :

4V @ 150μA

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

300W

Input Capacitance (Ciss) (Max) @ Vds :

6920pF @ 50V

Recovery Time :

54 ns

Power Dissipation-Max :

300W Tc

Packaging :

Tube

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

75V

Height :

2.39mm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Radiation Hardening :

No

Resistance :

4.1mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

6.22mm

Series :

HEXFET®

Termination :

SMD/SMT

Turn-Off Delay Time :

55 ns

Nominal Vgs :

4 V

Lead Free :

Lead Free

Current Rating :

170A

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Length :

6.73mm

Threshold Voltage :

4V

Turn On Delay Time :

20 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 75A, 10V

Dual Supply Voltage :

75V

Rise Time :

68ns

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Continuous Drain Current (ID) :

170A

Published :

2008