IRFS3207TRLPBF

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Mfr.Part #
IRFS3207TRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 170A D2PAK
Stock
4,028
In Stock :
4,028

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Nominal Vgs :
4 V
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Rds On (Max) @ Id, Vgs :
4.5m Ω @ 75A, 10V
Power Dissipation :
300W
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
720A
Power Dissipation-Max :
300W Tc
Radiation Hardening :
No
Transistor Application :
SWITCHING
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
75V
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
170A Tc
Continuous Drain Current (ID) :
180A
Current Rating :
180A
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Rise Time :
120ns
Height :
4.826mm
Operating Mode :
ENHANCEMENT MODE
Turn-Off Delay Time :
68 ns
Mount :
Surface Mount
Number of Pins :
3
Vgs (Max) :
±20V
Width :
9.65mm
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Factory Lead Time :
12 Weeks
Published :
2006
Resistance :
4.5mOhm
Length :
10.668mm
Threshold Voltage :
4V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
75A
Case Connection :
DRAIN
REACH SVHC :
No SVHC
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
74 ns
Time@Peak Reflow Temperature-Max (s) :
30
Series :
HEXFET®
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Number of Terminations :
2
Peak Reflow Temperature (Cel) :
260
Turn On Delay Time :
29 ns
Voltage - Rated DC :
75V
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
IRFS3207TRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFS3207TRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, IRFS3207TRLPBF pinout, IRFS3207TRLPBF datasheet PDF, IRFS3207TRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFS3207TRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFS3207TRLPBF


N-Channel Tape & Reel (TR) 4.5m Ω @ 75A, 10V ±20V 7600pF @ 50V 260nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS3207TRLPBF Overview


A device's maximum input capacitance is 7600pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=75V, and this device has a drain-to-source breakdown voltage of 75V voltage.Its drain current is 75A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.Its maximum pulsed drain current is 720A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 29 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFS3207TRLPBF Features


a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 720A.
a threshold voltage of 4V


IRFS3207TRLPBF Applications


There are a lot of Infineon Technologies
IRFS3207TRLPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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