IRFS3207PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Published :

2006

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

300W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

75V

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Number of Terminations :

2

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Surface Mount :

yes

Series :

HEXFET®

Number of Elements :

1

Case Connection :

DRAIN

Terminal Position :

Single

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

720A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

DS Breakdown Voltage-Min :

75V

Avalanche Energy Rating (Eas) :

910 mJ

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0045ohm

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Drain Current-Max (Abs) (ID) :

75A

Peak Reflow Temperature (Cel) :

260