IRFS3206TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 150μA

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Width :

9.65mm

Number of Pins :

3

Series :

HEXFET®

Continuous Drain Current (ID) :

120A

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

300W Tc

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

FET Type :

N-Channel

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Height :

4.826mm

Length :

10.668mm

Drain to Source Breakdown Voltage :

60V

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

83 ns

Power Dissipation :

300W

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Rise Time :

82ns

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

840A

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Elements :

1

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

6540pF @ 50V

Turn On Delay Time :

19 ns

Terminal Form :

Gull wing

Turn-Off Delay Time :

55 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount