IRFS3206PBF

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Mfr.Part #
IRFS3206PBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 120A D2PAK
Stock
47,835
In Stock :
47,835

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
60V
Power Dissipation :
300mW
Current Rating :
210A
Packaging :
Tube
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
3m Ω @ 75A, 10V
ECCN Code :
EAR99
Series :
HEXFET®
Power Dissipation-Max :
300W Tc
Threshold Voltage :
4V
Rise Time :
82ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
170nC @ 10V
Turn-Off Delay Time :
55 ns
Continuous Drain Current (ID) :
210A
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Fall Time (Typ) :
83 ns
Recovery Time :
50 ns
Input Capacitance (Ciss) (Max) @ Vds :
6540pF @ 50V
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Turn On Delay Time :
19 ns
Vgs(th) (Max) @ Id :
4V @ 150μA
Length :
10.67mm
Height :
4.826mm
Width :
9.65mm
Element Configuration :
Single
Voltage - Rated DC :
60V
Lead Free :
Lead Free
Mount :
Surface Mount
Contact Plating :
Tin
Number of Pins :
3
Published :
2007
FET Type :
N-Channel
Datasheets
IRFS3206PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFS3206PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, IRFS3206PBF pinout, IRFS3206PBF datasheet PDF, IRFS3206PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFS3206PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFS3206PBF


N-Channel Tube 3m Ω @ 75A, 10V ±20V 6540pF @ 50V 170nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS3206PBF Description


The IRFS3206PBF is a single N-channel HEXFET ?Power MOSFET with increased gate, avalanche, and dynamic dV/dt toughness. It is appropriate for high-efficiency synchronous rectification in SMPS, hard-switched, and high-frequency circuits.



IRFS3206PBF Features


  •  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

  •  Fully Characterized Capacitance and Avalanche SOA

  •  Enhanced body diode dV/dt and dI/dt Capability

  •  Lead-Free

  •  RoHS Compliant, Halogen-Free



IRFS3206PBF Applications


  • High-Efficiency Synchronous Rectification in SMPS

  • Uninterruptible Power Supply

  • High-Speed Power Switching

  • Hard Switched and High-Frequency Circuits


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