IRFS31N20DTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 25V

FET Type :

N-Channel

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

82m Ω @ 18A, 10V

Drain Current-Max (Abs) (ID) :

31A

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

200V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

420 mJ

Power Dissipation-Max :

3.1W Ta 200W Tc

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

124A

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Number of Elements :

1

Drain-source On Resistance-Max :

0.082Ohm

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Published :

2000

Drain to Source Voltage (Vdss) :

200V

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.95

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Series :

HEXFET®

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)