IRFS31N20DTRLP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Nominal Vgs :

5.5 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

200W

Resistance :

82mOhm

Voltage - Rated DC :

200V

Threshold Voltage :

5.5V

Published :

2000

Height :

4.826mm

REACH SVHC :

No SVHC

Turn-Off Delay Time :

23 ns

Drain to Source Breakdown Voltage :

200V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

13 ns

ECCN Code :

EAR99

Fall Time (Typ) :

10 ns

Power Dissipation-Max :

3.1W Ta 200W Tc

Width :

9.65mm

Current Rating :

31A

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rise Time :

38ns

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 25V

Rds On (Max) @ Id, Vgs :

82m Ω @ 18A, 10V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Series :

HEXFET®

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

31A

Current - Continuous Drain (Id) @ 25°C :

31A Tc

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Avalanche Energy Rating (Eas) :

420 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Dual Supply Voltage :

200V

Mount :

Surface Mount

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Length :

10.668mm

Number of Terminations :

2

Number of Pins :

3

Lead Free :

Lead Free