IRFS3107PBF

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Mfr.Part #
IRFS3107PBF
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 195A D2PAK
Stock
24,630
In Stock :
24,630

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
110ns
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
230A
Reverse Recovery Time :
54 ns
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Radiation Hardening :
No
Turn-Off Delay Time :
99 ns
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Vgs(th) (Max) @ Id :
4V @ 250µA
Published :
2008
Height :
4.826mm
Dual Supply Voltage :
75V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
195A Tc
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Operating Temperature :
-55°C~175°C TJ
Width :
9.65mm
Turn On Delay Time :
19 ns
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
75V
Power Dissipation-Max :
370W Tc
Rds On (Max) @ Id, Vgs :
3m Ω @ 140A, 10V
Nominal Vgs :
2.35 V
Packaging :
Tube
FET Type :
N-Channel
Lead Free :
Lead Free
REACH SVHC :
No SVHC
Threshold Voltage :
2.35V
Fall Time (Typ) :
100 ns
Input Capacitance (Ciss) (Max) @ Vds :
9370pF @ 50V
Series :
HEXFET®
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Power Dissipation :
370W
Termination :
SMD/SMT
Mount :
Surface Mount
Length :
10.668mm
Datasheets
IRFS3107PBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRFS3107PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, IRFS3107PBF pinout, IRFS3107PBF datasheet PDF, IRFS3107PBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRFS3107PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRFS3107PBF


N-Channel Tube 3m Ω @ 140A, 10V ±20V 9370pF @ 50V 240nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS3107PBF  Description


  In 1977, Alex Lidow and Tom Herman co-invented HexFET, a hexagonal power MOSFET, at Stanford University. HexFET was commercialized by the International Rectifier in 1978.


IRFS3107PBF  Applications


High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

 

IRFS3107PBF Features


 Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

 Fully Characterized Capacitance and Avalanche

 SOA

 Enhanced body diode dV/dt and dI/dt Capability

Lead-Free


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