IRFS3107PBF
- Mfr.Part #
- IRFS3107PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 195A D2PAK
- Stock
- 24,630
- In Stock :
- 24,630
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 110ns
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 230A
- Reverse Recovery Time :
- 54 ns
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 99 ns
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2008
- Height :
- 4.826mm
- Dual Supply Voltage :
- 75V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 9.65mm
- Turn On Delay Time :
- 19 ns
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 75V
- Power Dissipation-Max :
- 370W Tc
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 140A, 10V
- Nominal Vgs :
- 2.35 V
- Packaging :
- Tube
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 2.35V
- Fall Time (Typ) :
- 100 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 9370pF @ 50V
- Series :
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Power Dissipation :
- 370W
- Termination :
- SMD/SMT
- Mount :
- Surface Mount
- Length :
- 10.668mm
- Datasheets
- IRFS3107PBF

N-Channel Tube 3m Ω @ 140A, 10V ±20V 9370pF @ 50V 240nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS3107PBF Description
In 1977, Alex Lidow and Tom Herman co-invented HexFET, a hexagonal power MOSFET, at Stanford University. HexFET was commercialized by the International Rectifier in 1978.
IRFS3107PBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRFS3107PBF Features
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
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