IRFS3107PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Height :

4.826mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

230A

Threshold Voltage :

2.35V

Fall Time (Typ) :

100 ns

Nominal Vgs :

2.35 V

Operating Temperature :

-55°C~175°C TJ

Termination :

SMD/SMT

ECCN Code :

EAR99

Turn On Delay Time :

19 ns

Reverse Recovery Time :

54 ns

Number of Elements :

1

Dual Supply Voltage :

75V

Drain to Source Breakdown Voltage :

75V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Number of Pins :

3

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Series :

HEXFET®

Width :

9.65mm

Published :

2008

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Length :

10.668mm

Lead Free :

Lead Free

Element Configuration :

Single

Power Dissipation-Max :

370W Tc

Turn-Off Delay Time :

99 ns

Rds On (Max) @ Id, Vgs :

3m Ω @ 140A, 10V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

9370pF @ 50V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

370W

Rise Time :

110ns