IRFS3107-7PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Height :

4.572mm

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Resistance :

2.6MOhm

Transistor Application :

SWITCHING

Length :

10.668mm

Factory Lead Time :

14 Weeks

Packaging :

Tube

JESD-30 Code :

R-PSSO-G6

Termination :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 50V

Drain to Source Breakdown Voltage :

75V

Turn On Delay Time :

17 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Reverse Recovery Time :

52 ns

Power Dissipation :

370W

JESD-609 Code :

e3

Case Connection :

DRAIN

Number of Terminations :

6

FET Type :

N-Channel

Nominal Vgs :

4 V

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 160A, 10V

Avalanche Energy Rating (Eas) :

320 mJ

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

240A

Continuous Drain Current (ID) :

260A

Transistor Element Material :

SILICON

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Rise Time :

80ns

Series :

HEXFET®

Width :

9.65mm

Radiation Hardening :

No

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Power Dissipation-Max :

370W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Turn-Off Delay Time :

100 ns

Number of Pins :

7

Threshold Voltage :

4V

Mount :

Surface Mount

Fall Time (Typ) :

64 ns

Published :

2005

Dual Supply Voltage :

75V