IRFS3006TRLPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Rise Time :

182ns

Continuous Drain Current (ID) :

195A

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 170A, 10V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Series :

HEXFET®

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Turn On Delay Time :

16 ns

JESD-30 Code :

R-PSSO-G2

Length :

10.668mm

Input Capacitance (Ciss) (Max) @ Vds :

8970pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Resistance :

2.5MOhm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

118 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

189 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Height :

4.826mm

JESD-609 Code :

e3

Width :

9.65mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Mount :

Surface Mount

Power Dissipation :

375W

Vgs (Max) :

±20V

Terminal Position :

Single

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Published :

2006

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

270A

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Power Dissipation-Max :

375W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel