IRFS3006TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.65mm

Continuous Drain Current (ID) :

195A

FET Type :

N-Channel

Terminal Position :

Single

Turn-Off Delay Time :

118 ns

Power Dissipation-Max :

375W Tc

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Height :

4.826mm

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

8970pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 170A, 10V

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Published :

2006

Vgs (Max) :

±20V

Turn On Delay Time :

16 ns

Number of Elements :

1

Mount :

Surface Mount

Resistance :

2.5MOhm

Fall Time (Typ) :

189 ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

270A

Lead Free :

Lead Free

Power Dissipation :

375W

Rise Time :

182ns

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.668mm

JESD-609 Code :

e3

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB