IRFS3006PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

375W Tc

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

270A

Length :

10.668mm

Fall Time (Typ) :

189 ns

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Packaging :

Tube

Height :

4.826mm

Drain-source On Resistance-Max :

0.0025Ohm

Transistor Element Material :

SILICON

Power Dissipation :

375W

Turn On Delay Time :

16 ns

Current - Continuous Drain (Id) @ 25°C :

195A Tc

REACH SVHC :

No SVHC

Number of Terminations :

2

Element Configuration :

Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Threshold Voltage :

4V

Number of Pins :

3

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

118 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

Width :

9.65mm

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 170A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Case Connection :

DRAIN

Vgs (Max) :

±20V

FET Type :

N-Channel

Rise Time :

182ns

Input Capacitance (Ciss) (Max) @ Vds :

8970pF @ 50V