IRFS3006-7PPBF
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- Mfr.Part #
- IRFS3006-7PPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- HEXFET N-CHANNEL POWER MOSFET
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 4V
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Turn On Delay Time :
- 14 ns
- Factory Lead Time :
- 24 Weeks
- Resistance :
- 2.1MOhm
- Width :
- 9.65mm
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Turn-Off Delay Time :
- 118 ns
- Radiation Hardening :
- No
- Length :
- 10.668mm
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 168A, 10V
- Number of Elements :
- 1
- Series :
- HEXFET®
- Power Dissipation :
- 375W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Number of Pins :
- 7
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 60V
- Packaging :
- Tube
- Fall Time (Typ) :
- 69 ns
- Published :
- 2005
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Power Dissipation-Max :
- 375W Tc
- Rise Time :
- 61ns
- Continuous Drain Current (ID) :
- 293A
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 8850pF @ 50V
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 4.572mm
- Datasheets
- IRFS3006-7PPBF
N-Channel Tube 2.1m Ω @ 168A, 10V ±20V 8850pF @ 50V 300nC @ 10V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRFS3006-7PPBF Overview
A device's maximal input capacitance is 8850pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 293A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 118 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFS3006-7PPBF Features
a continuous drain current (ID) of 293A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 118 ns
a threshold voltage of 4V
IRFS3006-7PPBF Applications
There are a lot of Infineon Technologies
IRFS3006-7PPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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