IRFS3004TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

130 ns

Published :

2009

Packaging :

Tape and Reel (TR)

Width :

9.652mm

Continuous Drain Current (ID) :

240A

Power Dissipation :

380W

Power Dissipation-Max :

380W Tc

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Number of Pins :

3

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Transistor Element Material :

SILICON

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

195A Ta

Terminal Form :

Gull wing

Lead Free :

Lead Free

Height :

4.826mm

Number of Elements :

1

Turn On Delay Time :

23 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

220ns

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Length :

10.668mm

Mounting Type :

Surface Mount

Number of Terminations :

2

JESD-609 Code :

e3

Series :

HEXFET®

Turn-Off Delay Time :

90 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1.75m Ω @ 195A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V