IRFS3004PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

Height :

4.83mm

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Number of Terminations :

2

Power Dissipation-Max :

380W Tc

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.75m Ω @ 195A, 10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

195A Ta

Drain to Source Breakdown Voltage :

40V

Series :

HEXFET®

Rise Time :

220ns

Mounting Type :

Surface Mount

Length :

10.67mm

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Mount :

Surface Mount

Published :

2009

Terminal Form :

Gull wing

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Turn On Delay Time :

23 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

90 ns

Continuous Drain Current (ID) :

340A

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Radiation Hardening :

No

Power Dissipation :

380W

REACH SVHC :

No SVHC

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

130 ns

Width :

9.65mm

Terminal Finish :

MATTE TIN OVER NICKEL

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN