IRFS3004PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

90 ns

Power Dissipation :

380W

Number of Elements :

1

Series :

HEXFET®

REACH SVHC :

No SVHC

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

340A

Power Dissipation-Max :

380W Tc

Current - Continuous Drain (Id) @ 25°C :

195A Ta

Vgs (Max) :

±20V

Width :

9.65mm

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.75m Ω @ 195A, 10V

Turn On Delay Time :

23 ns

ECCN Code :

EAR99

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Rise Time :

220ns

Length :

10.67mm

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN OVER NICKEL

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

JESD-609 Code :

e3

Threshold Voltage :

4V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

40V

Fall Time (Typ) :

130 ns

Packaging :

Tube

Published :

2009

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

4.83mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No