IRFS250B

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

21.3A (Tc)

Package / Case :

TO-3P-3 Full Pack

Drain to Source Voltage (Vdss) :

200 V

Number of Terminals :

3

Pulsed Drain Current-Max (IDM) :

85 A

Pbfree Code :

No

Terminal Position :

Single

Power Dissipation (Max) :

90W (Tc)

FET Feature :

-

Product Status :

Active

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

85mOhm @ 10.65A, 10V

Vgs (Max) :

±30V

Surface Mount :

No

Drain-source On Resistance-Max :

0.085 Ω

Number of Elements :

1

JESD-609 Code :

e0

Polarity/Channel Type :

N-Channel

Technology :

MOSFET (Metal Oxide)

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

600 mJ

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Case Connection :

Isolated

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

Unknown

Package :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

123 nC @ 10 V

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On, Min Rds On) :

10V

Supplier Device Package :

TO-3PF

Terminal Finish :

TIN LEAD

Manufacturer :

Rochester Electronics LLC

DS Breakdown Voltage-Min :

200 V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3400 pF @ 25 V

Series :

-