IRFS240B
- Mfr.Part #
- IRFS240B
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 1,420
- In Stock :
- 1,420
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- Isolated
- Pin Count :
- 3
- FET Feature :
- -
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 12.8A (Tc)
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 200 V
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Vgs (Max) :
- ±30V
- Terminal Finish :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 180mOhm @ 6.4A, 10V
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 51.2 A
- Supplier Device Package :
- TO-220F
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 200 V
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.18 Ω
- Terminal Form :
- THROUGH-HOLE
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-220-3 Full Pack
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700 pF @ 25 V
- Package Shape :
- RECTANGULAR
- Manufacturer :
- Rochester Electronics LLC
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 58 nC @ 10 V
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 73W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Package :
- Bulk
- Series :
- -
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Datasheets
- IRFS240B

N-Channel 180mOhm @ 6.4A, 10V ±30V 1700 pF @ 25 V 58 nC @ 10 V 200 V TO-220-3 Full Pack
IRFS240B Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1700 pF @ 25 V.There is a peak drain current of 51.2 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200 V, it should remain above the 200 V level.The transistor must receive a 200 V drain to source voltage (Vdss) in order to function.
IRFS240B Features
the avalanche energy rating (Eas) is 250 mJ
based on its rated peak drain current 51.2 A.
a 200 V drain to source voltage (Vdss)
IRFS240B Applications
There are a lot of Fairchild Semiconductor
IRFS240B applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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