IRFS23N20DTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Continuous Drain Current (ID) :

24A

Rise Time :

32ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2004

JESD-609 Code :

e3

Radiation Hardening :

No

Fall Time (Typ) :

16 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

30V

Max Operating Temperature :

175°C

Case Connection :

DRAIN

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Turn-Off Delay Time :

26 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

96A

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

Power Dissipation-Max :

3.8W Ta 170W Tc

Mounting Type :

Surface Mount

Series :

HEXFET®

Turn On Delay Time :

14 ns

Power Dissipation :

170W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Length :

10.668mm

Width :

9.65mm

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 10V

Height :

4.826mm

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

200V

FET Type :

N-Channel

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

250 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE