IRFS23N20DTRLP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

250 mJ

Vgs (Max) :

±30V

Voltage - Rated DC :

200V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

24A Tc

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Published :

2004

Turn On Delay Time :

14 ns

Width :

9.65mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

200V

Continuous Drain Current (ID) :

24A

Series :

HEXFET®

Fall Time (Typ) :

16 ns

Number of Elements :

1

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

5.5V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Mounting Type :

Surface Mount

Length :

10.668mm

Resistance :

100MOhm

FET Type :

N-Channel

Factory Lead Time :

14 Weeks

Rise Time :

32ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

26 ns

Mount :

Surface Mount

Power Dissipation-Max :

3.8W Ta 170W Tc

Height :

4.826mm

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Dual Supply Voltage :

200V

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 10V

Number of Terminations :

2

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

3.8W

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Termination :

SMD/SMT

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

24A

Pulsed Drain Current-Max (IDM) :

96A

Nominal Vgs :

5.5 V

Lead Free :

Contains Lead, Lead Free

Number of Pins :

3