IRFS23N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.1Ohm

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

96A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 10V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

24A

Published :

2000

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

250 mJ

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.8W Ta 170W Tc

JESD-609 Code :

e3

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

200V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Number of Terminations :

2

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200V