IRFS23N15DTRLP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Transistor Application :

SWITCHING

Voltage - Rated DC :

150V

Pulsed Drain Current-Max (IDM) :

92A

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Case Connection :

DRAIN

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

90m Ω @ 14A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Fall Time (Typ) :

8.4 ns

Number of Terminations :

2

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.8W Ta 136W Tc

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Power Dissipation :

3.8W

Continuous Drain Current (ID) :

23A

Drain-source On Resistance-Max :

0.09Ohm

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

150V

Mounting Type :

Surface Mount

Rise Time :

32ns

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

ECCN Code :

EAR99

Turn-Off Delay Time :

18 ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

Current Rating :

23A

Series :

HEXFET®

Published :

2004

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Avalanche Energy Rating (Eas) :

260 mJ

Element Configuration :

Single