IRFS23N15D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

92A

Drain to Source Voltage (Vdss) :

150V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

DS Breakdown Voltage-Min :

150V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Power Dissipation-Max :

3.8W Ta 136W Tc

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

90m Ω @ 14A, 10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Surface Mount :

yes

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Published :

2000

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

260 mJ

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.09Ohm

ECCN Code :

EAR99

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

23A

Peak Reflow Temperature (Cel) :

225

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Transistor Application :

SWITCHING