IRFS17N20D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 140W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Rds On (Max) @ Id, Vgs :

170m Ω @ 9.8A, 10V

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

16A

Pulsed Drain Current-Max (IDM) :

64A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Transistor Application :

SWITCHING

Published :

2000

Surface Mount :

yes

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

200V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

240 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Drain to Source Voltage (Vdss) :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Series :

HEXFET®

Drain-source On Resistance-Max :

0.17Ohm

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Transistor Element Material :

SILICON

ECCN Code :

EAR99