IRFS11N50ATRL
- Mfr.Part #
- IRFS11N50ATRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 11A D2PAK
- Stock
- 34,233
- In Stock :
- 34,233
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 500V
- Rds On Max :
- 520 mΩ
- Fall Time (Typ) :
- 28 ns
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-263AB
- Packaging :
- Tape and Reel (TR)
- Length :
- 10.67mm
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 500V
- Height :
- 4.83mm
- Continuous Drain Current (ID) :
- 11A
- Rise Time :
- 35ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 9.65mm
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Published :
- 2016
- FET Type :
- N-Channel
- Weight :
- 1.437803g
- Turn-Off Delay Time :
- 32 ns
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 520mOhm @ 6.6A, 10V
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance :
- 1.423nF
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 14 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 170W Tc
- Vgs (Max) :
- ±30V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Resistance :
- 520mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1423pF @ 25V
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Resistance :
- 520mOhm
- Element Configuration :
- Single
- Datasheets
- IRFS11N50ATRL
N-Channel Tape & Reel (TR) 520mOhm @ 6.6A, 10V ±30V 1423pF @ 25V 52nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS11N50ATRLP Overview
A device's maximal input capacitance is 1423pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 32 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 520mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFS11N50ATRLP Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 520mOhm
a 500V drain to source voltage (Vdss)
IRFS11N50ATRLP Applications
There are a lot of Vishay Siliconix
IRFS11N50ATRLP applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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