IRFS11N50APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

D2PAK

Turn-Off Delay Time :

32 ns

Mount :

Surface Mount

Vgs (Max) :

±30V

Width :

9.65mm

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Number of Channels :

1

Power Dissipation :

170W

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Drain to Source Voltage (Vdss) :

500V

Rise Time :

35ns

Input Capacitance (Ciss) (Max) @ Vds :

1423pF @ 25V

Rds On Max :

520 mΩ

Number of Elements :

1

Min Operating Temperature :

-55°C

Power Dissipation-Max :

170W Tc

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

Unknown

Fall Time (Typ) :

28 ns

Input Capacitance :

1.423nF

Number of Pins :

3

Continuous Drain Current (ID) :

11A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Resistance :

520mOhm

Factory Lead Time :

8 Weeks

Published :

2014

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

520mOhm @ 6.6A, 10V

Packaging :

Tube

Element Configuration :

Single

Lead Free :

Lead Free

Length :

10.67mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

30V

Height :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

1.437803g

FET Type :

N-Channel

Turn On Delay Time :

14 ns

Max Operating Temperature :

150°C

Threshold Voltage :

4V