IRFNL210BTA-FP001
- Mfr.Part #
- IRFNL210BTA-FP001
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- IRFNL210 - POWER MOSFET, N-CHANN
- Stock
- 10,621
- In Stock :
- 10,621
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 35ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9.3nC @ 10V
- Mounting Type :
- Through Hole
- Current Rating :
- 1A
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 200V
- Turn-Off Delay Time :
- 20 ns
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Mount :
- Through Hole
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Turn On Delay Time :
- 5.2 ns
- Packaging :
- Tape and Box (TB)
- Input Capacitance (Ciss) (Max) @ Vds :
- 225pF @ 25V
- Power Dissipation-Max :
- 3.1W Ta
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 500mA, 10V
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 1A
- Lifecycle Status :
- LIFETIME (Last Updated: 3 days ago)
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 25 ns
- Power Dissipation :
- 3.1W
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 200V
- Datasheets
- IRFNL210BTA-FP001

N-Channel Tape & Box (TB) 1.5 Ω @ 500mA, 10V ±30V 225pF @ 25V 9.3nC @ 10V TO-226-3, TO-92-3 Long Body
IRFNL210BTA-FP001 Overview
A device's maximal input capacitance is 225pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
IRFNL210BTA-FP001 Features
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 20 ns
IRFNL210BTA-FP001 Applications
There are a lot of ON Semiconductor
IRFNL210BTA-FP001 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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