IRFNL210BTA-FP001

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Mfr.Part #
IRFNL210BTA-FP001
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
IRFNL210 - POWER MOSFET, N-CHANN
Stock
10,621
In Stock :
10,621

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
35ns
Gate Charge (Qg) (Max) @ Vgs :
9.3nC @ 10V
Mounting Type :
Through Hole
Current Rating :
1A
Element Configuration :
Single
Drain to Source Breakdown Voltage :
200V
Turn-Off Delay Time :
20 ns
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Mount :
Through Hole
Number of Pins :
3
Package / Case :
TO-226-3, TO-92-3 Long Body
Turn On Delay Time :
5.2 ns
Packaging :
Tape and Box (TB)
Input Capacitance (Ciss) (Max) @ Vds :
225pF @ 25V
Power Dissipation-Max :
3.1W Ta
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
1.5 Ω @ 500mA, 10V
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
1A
Lifecycle Status :
LIFETIME (Last Updated: 3 days ago)
FET Type :
N-Channel
Radiation Hardening :
No
Fall Time (Typ) :
25 ns
Power Dissipation :
3.1W
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±30V
RoHS Status :
RoHS Compliant
Voltage - Rated DC :
200V
Datasheets
IRFNL210BTA-FP001
Introducing Transistors - FETs, MOSFETs - Single onsemi IRFNL210BTA-FP001 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 Long Body, Operating Temperature:-55°C~150°C TJ, IRFNL210BTA-FP001 pinout, IRFNL210BTA-FP001 datasheet PDF, IRFNL210BTA-FP001 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi IRFNL210BTA-FP001 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi IRFNL210BTA-FP001


N-Channel Tape & Box (TB) 1.5 Ω @ 500mA, 10V ±30V 225pF @ 25V 9.3nC @ 10V TO-226-3, TO-92-3 Long Body

IRFNL210BTA-FP001 Overview


A device's maximal input capacitance is 225pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

IRFNL210BTA-FP001 Features


a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 20 ns


IRFNL210BTA-FP001 Applications


There are a lot of ON Semiconductor
IRFNL210BTA-FP001 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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