IRC730PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

74W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

FET Type :

N-Channel

Package / Case :

TO-220-5

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Mount :

Through Hole

Vgs (Max) :

±20V

Length :

10.67mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Terminal Position :

Single

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T5

Weight :

3.000003g

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

FET Feature :

Current Sensing

Fall Time (Typ) :

14 ns

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

1Ohm

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

Single

Height :

9.02mm

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

22A

Published :

1997

Packaging :

Tube

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Pin Count :

5

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

400V

Turn-Off Delay Time :

38 ns

Turn On Delay Time :

18 ns

Rise Time :

15ns

Width :

4.83mm

Continuous Drain Current (ID) :

5.5A

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA