IRC540PBF

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Mfr.Part #
IRC540PBF
Manufacturer
Vishay
Package / Case
TO-220-5
Datasheet
Download
Description
MOSFET N-CH 100V 28A TO220-5
Stock
32,665
In Stock :
32,665

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
100V
Turn On Delay Time :
13 ns
Input Capacitance :
1.3nF
Current Rating :
28A
Published :
1997
Rds On Max :
77 mΩ
Vgs (Max) :
±20V
Package / Case :
TO-220-5
Turn-Off Delay Time :
40 ns
Fall Time (Typ) :
48 ns
Supplier Device Package :
TO-220-5
Length :
10.67mm
Height :
9.02mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Packaging :
Tube
Drain to Source Resistance :
77mOhm
Drain to Source Breakdown Voltage :
100V
Power Dissipation :
150W
Max Operating Temperature :
175°C
Number of Elements :
1
Width :
4.83mm
Lead Free :
Lead Free
Operating Temperature :
-55°C~175°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Weight :
3.000003g
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55°C
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
100V
Current - Continuous Drain (Id) @ 25°C :
28A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
HEXFET®
Rds On (Max) @ Id, Vgs :
77mOhm @ 17A, 10V
Continuous Drain Current (ID) :
28A
Mount :
Through Hole
FET Type :
N-Channel
Power Dissipation-Max :
150W Tc
Gate Charge (Qg) (Max) @ Vgs :
69nC @ 10V
FET Feature :
Current Sensing
Mounting Type :
Through Hole
Rise Time :
77ns
Number of Channels :
1
Gate to Source Voltage (Vgs) :
20V
Datasheets
IRC540PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRC540PBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-5, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Channels:1, IRC540PBF pinout, IRC540PBF datasheet PDF, IRC540PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRC540PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 77mOhm @ 17A, 10V ±20V 1300pF @ 25V 69nC @ 10V 100V TO-220-5

IRC540PBF Overview


A device's maximal input capacitance is 1300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 28A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 77mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRC540PBF Features


a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)


IRC540PBF Applications


There are a lot of Vishay Siliconix
IRC540PBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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