IRC540PBF
- Mfr.Part #
- IRC540PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-5
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 28A TO220-5
- Stock
- 32,665
- In Stock :
- 32,665
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Turn On Delay Time :
- 13 ns
- Input Capacitance :
- 1.3nF
- Current Rating :
- 28A
- Published :
- 1997
- Rds On Max :
- 77 mΩ
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-5
- Turn-Off Delay Time :
- 40 ns
- Fall Time (Typ) :
- 48 ns
- Supplier Device Package :
- TO-220-5
- Length :
- 10.67mm
- Height :
- 9.02mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Drain to Source Resistance :
- 77mOhm
- Drain to Source Breakdown Voltage :
- 100V
- Power Dissipation :
- 150W
- Max Operating Temperature :
- 175°C
- Number of Elements :
- 1
- Width :
- 4.83mm
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Weight :
- 3.000003g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 100V
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 77mOhm @ 17A, 10V
- Continuous Drain Current (ID) :
- 28A
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 150W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 69nC @ 10V
- FET Feature :
- Current Sensing
- Mounting Type :
- Through Hole
- Rise Time :
- 77ns
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRC540PBF
N-Channel Tube 77mOhm @ 17A, 10V ±20V 1300pF @ 25V 69nC @ 10V 100V TO-220-5
IRC540PBF Overview
A device's maximal input capacitance is 1300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 28A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 77mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRC540PBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)
IRC540PBF Applications
There are a lot of Vishay Siliconix
IRC540PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IRC530PBF | Vishay | 6,866 | MOSFET N-CH 100V 14A TO220-5 |
















