IR2181SPBF
- Mfr.Part #
- IR2181SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 3,351
- In Stock :
- 3,351
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Number of Outputs :
- 2
- High Side Driver :
- yes
- Max Power Dissipation :
- 625mW
- Current - Peak Output (Source, Sink) :
- 1.9A 2.3A
- Turn-Off Delay Time :
- 330 ns
- High Side Voltage - Max (Bootstrap) :
- 600V
- Base Part Number :
- IR2181SPBF
- Driven Configuration :
- Half-Bridge
- Turn On Delay Time :
- 270 ns
- Published :
- 1996
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- JESD-609 Code :
- e3
- Lead Free :
- Contains Lead, Lead Free
- Width :
- 3.9878mm
- REACH SVHC :
- No SVHC
- Operating Supply Voltage :
- 15V
- Mount :
- Surface Mount
- Voltage - Supply :
- 10V~20V
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Release Time :
- 220 ns
- Logic Voltage - VIL, VIH :
- 0.8V 2.7V
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Rise Time :
- 60ns
- Output Current :
- 1.9A
- Factory Lead Time :
- 12 Weeks
- Input Type :
- Non-Inverting
- Length :
- 4.9784mm
- Fall Time (Typ) :
- 35 ns
- Number of Terminations :
- 8
- Operating Temperature :
- -40°C~150°C TJ
- Max Output Current :
- 2.3A
- Channel Type :
- Independent
- Number of Functions :
- 1
- Output Peak Current Limit-Nom :
- 2.3A
- Turn Off Time :
- 0.33 μs
- Rise / Fall Time (Typ) :
- 40ns 20ns
- Power Dissipation :
- 625mW
- Gate Type :
- IGBT, N-Channel MOSFET
- Mounting Type :
- Surface Mount
- Supply Voltage :
- 15V
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.4986mm
- Propagation Delay :
- 330 ns
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- IR2181SPBF

Gate Drivers Infineon Technologies IR2181SPBF Overview
The Infineon Technologies IR2181SPBF is a high-performance, half-bridge gate driver designed to efficiently control MOSFETs and IGBTs. Engineered with precision and reliability in mind, this integrated circuit simplifies the design of complex switching applications. The IR2181SPBF incorporates advanced features such as under-voltage lockout and matched propagation delays, making it an ideal choice for enhancing system performance and robustness. Its compact 8SOIC package allows for space-efficient designs, which is critical in modern electronic applications. This [Gate Drivers Infineon Technologies IR2181SPBF] is tailored for a wide range of industrial and consumer applications, ensuring optimal performance in driving high-frequency switching devices.
IR2181SPBF Features
The IR2181SPBF gate driver includes several key features that set it apart:
- Integrated under-voltage lockout protection ensures that the device operates only at safe voltage levels, thus protecting the MOSFETs and IGBTs from low-voltage damage.
- High current driving capability for both high-side and low-side switches enhances the efficiency and response time of power switching applications.
- Matched propagation delays between channels reduce timing errors in switching, improving overall system efficiency and performance.
- The device's robust design enables operation in harsh environments, making it suitable for demanding industrial applications.
- Compact 8SOIC packaging allows for integration into space-constrained applications while maintaining excellent thermal performance.
IR2181SPBF Applications
- Motor Drives: Enables precise control of high-power motors in industrial machinery and electric vehicles, by efficiently driving the gates of power transistors.
- Power Supplies: Used in the switching elements of AC-DC and DC-DC converters, ensuring efficient power management and conversion.
- Solar Inverters: Critical for managing power switching in photovoltaic (PV) inverters, enhancing the conversion efficiency from DC to AC.
- Uninterruptible Power Supplies (UPS): Ensures reliable operation of backup power systems by controlling the high-speed switching needed for power inversion.
- Electric Vehicle (EV) Charging Stations: Drives the power modules necessary for rapid and efficient charging of electric vehicles.
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