IR2102SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Radiation Hardening :

No

Fall Time (Typ) :

50 ns

Nominal Supply Current :

150μA

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Peak Output (Source, Sink) :

210mA 360mA

ECCN Code :

EAR99

Max Supply Current :

270μA

Mounting Type :

Surface Mount

High Side Voltage - Max (Bootstrap) :

600V

Channel Type :

Independent

Length :

4.9784mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

625mW

Number of Terminations :

8

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Turn-Off Delay Time :

150 ns

Height :

1.75mm

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Input Type :

Inverting

Propagation Delay :

220 ns

Gate Type :

IGBT, N-Channel MOSFET

Ambient Temperature Range High :

125°C

Power Supplies :

15V

Base Part Number :

IR2102SPBF

Terminal Finish :

Matte Tin (Sn)

Width :

3.9878mm

Published :

1996

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Output Voltage :

620V

Max Output Current :

360mA

Terminal Position :

Dual

Rise / Fall Time (Typ) :

100ns 50ns

Number of Outputs :

2

Number of Functions :

1

Mount :

Surface Mount

Output Peak Current Limit-Nom :

0.36A

Driven Configuration :

Half-Bridge

Rise Time :

100ns

Max Power Dissipation :

625mW

Factory Lead Time :

12 Weeks

Max Junction Temperature (Tj) :

150°C

Packaging :

Tube

Logic Voltage - VIL, VIH :

0.8V 3V

High Side Driver :

yes

Operating Temperature :

-40°C~150°C TJ

Supply Voltage :

15V

Number of Pins :

8

Turn On Delay Time :

160 ns

Output Current :

210mA

Voltage - Supply :

10V~20V