IR21716S

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Mfr.Part #
IR21716S
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
IC GATE DRVR HALF-BRIDGE 16SOIC
Stock
1,355
In Stock :
1,355

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Manufacturer :
Infineon Technologies
Product Category :
Gate Drivers
JESD-609 Code :
e3
Operating Temperature :
-40°C~150°C TJ
Number of Drivers :
2
Supply Voltage :
15V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2006
Length :
10.3mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS Status :
Non-RoHS Compliant
Terminal Position :
Dual
Voltage - Supply :
13V~20V
Gate Type :
IGBT
Supply Voltage-Min (Vsup) :
9.5V
Analog IC - Other Type :
ANALOG CIRCUIT
Qualification Status :
Not Qualified
Number of Functions :
1
JESD-30 Code :
R-PDSO-G16
Input Type :
Non-Inverting
Number of Terminations :
16
Driven Configuration :
Half-Bridge
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Channel Type :
SYNCHRONOUS
Packaging :
Tube
Mounting Type :
Surface Mount
Width :
7.5mm
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
High Side Voltage - Max (Bootstrap) :
600V
Surface Mount :
yes
Base Part Number :
IR21716S
Datasheets
IR21716S
Introducing Gate Drivers Infineon Technologies IR21716S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Number of Terminations:16, Mounting Type:Surface Mount, Base Part Number:IR21716S, IR21716S pinout, IR21716S datasheet PDF, IR21716S amp .Beyond Gate Drivers Infineon Technologies IR21716S ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IR21716S


Gate Drivers Infineon Technologies IR21716S Overview

The Infineon Technologies IR21716S is a high-performance, half-bridge gate driver designed to efficiently control MOSFETs and IGBTs. This component is encapsulated in a compact 16-SOIC package, making it suitable for densely packed layouts where space is at a premium. As a gate driver, the IR21716S ensures reliable switching with low propagation delays and matched PWM signals, which is critical for high-frequency applications. This robust driver is specifically engineered to improve system reliability and enhance power conversion efficiency, making it an ideal choice for advanced power systems. The use of the Gate Drivers Infineon Technologies IR21716S in your designs guarantees improved performance in demanding environments.

IR21716S Features

The IR21716S gate driver from Infineon Technologies boasts several key features that make it a standout choice for powering half-bridge circuits. It offers integrated dead-time insertion, under-voltage lockout protection, and a robust output drive capability. Additionally, the driver supports up to 600V, providing ample voltage headroom for various industrial applications. Its high-speed operation and dual independent channels enable precise control over switching characteristics, reducing power loss and improving total system efficiency.

IR21716S Applications

  • Electric Vehicle Powertrains: The IR21716S is used to control the power switching components within the drive inverters, crucial for the efficient conversion of battery power to mechanical power.
  • Renewable Energy Systems: In solar inverters and wind turbine converters, this driver manages the gate operations of semiconductors, optimizing power flow and enhancing energy conversion efficiency.
  • Uninterruptible Power Supplies (UPS): Ensures smooth and continuous power delivery by driving the gates of MOSFETs or IGBTs in the power stage of UPS systems, maintaining power reliability and stability.
  • High-Power Motor Drives: It is critical in applications requiring high switching frequencies and efficient current handling to drive large industrial motors.
  • Switched Mode Power Supplies (SMPS): This gate driver facilitates the fast switching required in SMPS to achieve a compact design and efficient power conversion.
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