IR21362JPBF
- Mfr.Part #
- IR21362JPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 44-LCC (J-Lead), 32 Leads
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 44PLCC
- Stock
- 18,038
- In Stock :
- 18,038
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- High Side Voltage - Max (Bootstrap) :
- 600V
- Current - Peak Output (Source, Sink) :
- 200mA 350mA
- Published :
- 2008
- Base Part Number :
- IR21362JPBF
- Turn-Off Delay Time :
- 400 ns
- Number of Pins :
- 44
- Max Output Current :
- 350mA
- Fall Time (Typ) :
- 75 ns
- Turn On Delay Time :
- 550 ns
- Mounting Type :
- Surface Mount
- Channel Type :
- 3-Phase
- Max Power Dissipation :
- 2W
- Driven Configuration :
- Half-Bridge
- Output Voltage :
- 300mV
- Rise / Fall Time (Typ) :
- 125ns 50ns
- Output Current :
- 200mA
- Logic Voltage - VIL, VIH :
- 0.8V 3V
- Input Type :
- Inverting, Non-Inverting
- Number of Drivers :
- 6
- Power Dissipation :
- 2W
- Voltage - Supply :
- 11.5V~20V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Packaging :
- Tube
- Rise Time :
- 190ns
- Package / Case :
- 44-LCC (J-Lead), 32 Leads
- Operating Temperature :
- -40°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Gate Type :
- IGBT, N-Channel MOSFET
- Nominal Supply Current :
- 120μA
- Mount :
- Surface Mount
- Datasheets
- IR21362JPBF

Gate Drivers Infineon Technologies IR21362JPBF Overview
The Infineon Technologies IR21362JPBF is a state-of-the-art gate driver designed specifically for half-bridge applications within power management solutions. This integrated circuit ensures robust performance in driving MOSFETs and IGBTs, facilitating efficient power conversion in a variety of demanding applications. Its compact 44PLCC package makes it suitable for high-density mounting, contributing to reduced space and weight concerns in complex circuit designs. Emphasizing reliability and efficiency, the IR21362JPBF is an optimal choice for developers seeking advanced gate driver capabilities coupled with Infineon's cutting-edge semiconductor technology.
IR21362JPBF Features
The IR21362JPBF gate driver includes multiple features tailored for superior performance in power electronics. Key features include high voltage operation up to 600V, integrated Vcc and bootstrap diode for easier design and enhanced reliability, and built-in dead-time insertion capability which significantly reduces the risk of cross-conduction. Moreover, its robust output drivers can source and sink high peak currents, ensuring effective gate switching and thermal management.
IR21362JPBF Applications
- Solar Inverters: The IR21362JPBF is utilized to drive the power switches in solar inverters, enhancing energy conversion efficiency and reliability under variable environmental conditions.
- Electric Vehicle Powertrains: In EV powertrains, this gate driver controls the high-power IGBTs necessary for efficient motor management, contributing to better performance and range of electric vehicles.
- Uninterruptible Power Supplies (UPS): Ensures stable operation of power switches in UPS systems, providing reliable power backup and protection against power surges and interruptions.
- Induction Heating Systems: Plays a critical role in managing the switching operations for induction heating applications, leading to precise temperature control and improved energy efficiency.
- High-Power DC/DC Converters: The IR21362JPBF effectively drives the gates of transistors in DC/DC converters used in various industrial and telecommunication infrastructures, ensuring optimal power management and conversion.
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