IR21271SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Terminal Position :

Dual

Output Voltage :

20V

Rise Time :

130ns

Min Output Voltage :

9V

Power Dissipation :

625mW

Number of Pins :

8

Nominal Supply Current :

120μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Published :

1996

Number of Terminations :

8

Turn On Delay Time :

250 ns

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead, Lead Free

High Side Voltage - Max (Bootstrap) :

600V

Terminal Finish :

Matte Tin (Sn)

Height :

1.4986mm

Propagation Delay :

250 ns

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Current - Peak Output (Source, Sink) :

250mA 500mA

Max Output Current :

500mA

Gate Type :

IGBT, N-Channel MOSFET

Rise / Fall Time (Typ) :

80ns 40ns

Input Type :

Non-Inverting

Terminal Form :

Gull wing

Termination :

SMD/SMT

Max Power Dissipation :

625mW

JESD-609 Code :

e3

Driven Configuration :

High-Side or Low-Side

REACH SVHC :

No SVHC

Number of Outputs :

1

Turn-Off Delay Time :

200 ns

Packaging :

Tube

Base Part Number :

IR21271SPBF

Supply Voltage :

15V

Output Peak Current Limit-Nom :

0.5A

Width :

3.9878mm

Voltage - Supply :

9V~20V

Operating Temperature :

-40°C~150°C TJ

Output Current :

200mA

Turn Off Time :

0.2 μs

High Side Driver :

yes

Fall Time (Typ) :

65 ns

Mount :

Surface Mount

Logic Voltage - VIL, VIH :

0.8V 3V

Length :

4.9784mm

Factory Lead Time :

12 Weeks

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Channel Type :

Single

Turn On Time :

0.25 μs

Max Output Voltage :

20V

Resistance :

125Ohm