IR2118SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Fall Time (Typ) :

65 ns

Time@Peak Reflow Temperature-Max (s) :

30

Max Output Current :

500mA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Logic Voltage - VIL, VIH :

6V 9.5V

Length :

4.9784mm

High Side Driver :

yes

Output Current :

250mA

Propagation Delay :

200 ns

Rise / Fall Time (Typ) :

80ns 40ns

Power Dissipation :

625mW

Max Supply Current :

340µA

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER

Driven Configuration :

High-Side

Base Part Number :

IR2118SPBF

Published :

1996

Max Power Dissipation :

625mW

Peak Reflow Temperature (Cel) :

260

Rise Time :

130ns

Channel Type :

Single

Number of Outputs :

1

REACH SVHC :

No SVHC

Mount :

Surface Mount

Supply Voltage :

15V

Turn On Delay Time :

125 ns

Current - Peak Output (Source, Sink) :

250mA 500mA

Lead Free :

Contains Lead, Lead Free

Terminal Position :

Dual

ECCN Code :

EAR99

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Number of Pins :

8

Voltage - Supply :

10V~20V

Turn-Off Delay Time :

65 ns

Output Peak Current Limit-Nom :

0.5A

Height :

1.4986mm

JESD-609 Code :

e3

Width :

3.9878mm

Turn On Time :

0.2 μs

Factory Lead Time :

12 Weeks

Packaging :

Tube

Nominal Supply Current :

340µA

Number of Terminations :

8

High Side Voltage - Max (Bootstrap) :

600V

Output Voltage :

20V

Gate Type :

IGBT, N-Channel MOSFET

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Operating Temperature :

-40°C~150°C TJ

Input Type :

Inverting