IR2118PBF
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- Mfr.Part #
- IR2118PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- IC GATE DRVR HIGH-SIDE 8DIP
- Stock
- 46,868
- In Stock ：
- 46,868
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Terminal Pitch :
- 2.54mm
- Rise / Fall Time (Typ) :
- 80ns 40ns
- Number of Terminations :
- 8
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Supply :
- 10V~20V
- Packaging :
- Tube
- Published :
- 1996
- Fall Time (Typ) :
- 65 ns
- Operating Temperature :
- -40°C~150°C TJ
- Driven Configuration :
- High-Side
- Length :
- 10.8966mm
- ECCN Code :
- EAR99
- Max Supply Current :
- 340µA
- Width :
- 7.11mm
- Number of Outputs :
- 1
- Channel Type :
- Single
- Max Power Dissipation :
- 1W
- Gate Type :
- IGBT, N-Channel MOSFET
- Output Peak Current Limit-Nom :
- 0.5A
- Mounting Type :
- Through Hole
- Max Output Current :
- 500mA
- Logic Voltage - VIL, VIH :
- 6V 9.5V
- Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Max Output Voltage :
- 20V
- Number of Functions :
- 1
- Turn-Off Delay Time :
- 180 ns
- Terminal Position :
- Dual
- Number of Pins :
- 8
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Output Current :
- 250mA
- High Side Driver :
- yes
- Min Output Voltage :
- 10V
- Rise Time :
- 130ns
- Base Part Number :
- IR2118PBF
- Propagation Delay :
- 200 ns
- Nominal Supply Current :
- 50μA
- Package / Case :
- 8-DIP (0.300, 7.62mm)
- Input Type :
- Inverting
- Supply Voltage :
- 15V
- Height :
- 4.9276mm
- Turn On Time :
- 0.2 μs
- Radiation Hardening :
- No
- Turn On Delay Time :
- 200 ns
- Output Voltage :
- 620V
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Contains Lead
- High Side Voltage - Max (Bootstrap) :
- 600V
- Datasheets
- IR2118PBF
Gate Drivers Infineon Technologies IR2118PBF Overview
Introducing the IR2118PBF, a high-performance Gate Driver from Infineon Technologies, designed to control high-side power MOSFETs and IGBTs. This component is essential for engineers looking to achieve reliable and efficient switching performance. The IR2118PBF utilizes advanced high-voltage IC technology to drive discrete power devices. Its robust design is particularly suited for managing higher voltages and currents, ensuring that the device operates under optimal conditions. The inclusion of a built-in under-voltage lockout and matched propagation delay times enhances system reliability and performance, making the Gate Drivers Infineon Technologies IR2118PBF an ideal choice for sophisticated power conversion and management applications.
IR2118PBF Features
The IR2118PBF is packed with features that optimize its performance in various applications. Key features include a floating channel designed for bootstrap operation up to 600 V, under-voltage lockout for both channels, and an independent high-side and low-side output. It also boasts a 3.3V and 5V input logic compatible, making it versatile for integration into existing designs. The dead-time is programmable, offering customization to specific needs, and the device supports up to 500 mA/200 mA output current, ensuring robust drive capability.
IR2118PBF Applications
- DC-AC Inverters: Used in inverter circuits to drive high-side MOSFETs, enabling efficient power conversion for renewable energy solutions like solar inverters.
- Motor Control: Employs in the driving of high-side switches used in brushless DC and AC motor drivers, providing precise control and enhanced operational efficiency.
- Switched Mode Power Supplies (SMPS): Facilitates the switching of power transistors, improving the efficiency and performance of power supplies in computers and servers.
- Inductive Heating Systems: Drives MOSFETs in high-frequency inductive heating applications, delivering the necessary power control for efficient thermal management.
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