IR2109STR
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- Mfr.Part #
- IR2109STR
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Stock
- 27,198
- In Stock ：
- 27,198
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Drivers :
- 2
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Channel Type :
- SYNCHRONOUS
- Additional Feature :
- FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
- Rise / Fall Time (Typ) :
- 150ns 50ns
- Height Seated (Max) :
- 1.75mm
- Packaging :
- Tape and Reel (TR)
- Length :
- 4.9mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Peak Output (Source, Sink) :
- 200mA 350mA
- Driven Configuration :
- Half-Bridge
- Terminal Finish :
- Matte Tin (Sn)
- High Side Driver :
- yes
- Mounting Type :
- Surface Mount
- Published :
- 1996
- Qualification Status :
- Not Qualified
- High Side Voltage - Max (Bootstrap) :
- 600V
- Supply Voltage :
- 15V
- Input Type :
- Non-Inverting
- Output Peak Current Limit-Nom :
- 0.35A
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Gate Type :
- IGBT, N-Channel MOSFET
- Width :
- 3.9mm
- Operating Temperature :
- -40°C~150°C TJ
- Turn On Time :
- 0.95 μs
- Number of Terminations :
- 8
- JESD-609 Code :
- e3
- Number of Functions :
- 1
- Base Part Number :
- IR2109SPBF
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-G8
- Voltage - Supply :
- 10V~20V
- Logic Voltage - VIL, VIH :
- 0.8V 2.9V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IR2109STR
Gate Drivers Infineon Technologies IR2109STR Overview
Introducing the IR2109STR from Infineon Technologies, a state-of-the-art half-bridge gate driver designed for high-performance applications that demand reliability and efficiency. This component, housed in an 8SOIC package, is engineered to drive both N-channel and P-channel MOSFETs or IGBTs, making it a versatile solution for advanced electronic circuits. The IR2109STR is optimized to handle challenging environments and offers a robust design to enhance system reliability. This product is an excellent choice for designers looking to push the boundaries of power management and control.
IR2109STR Features
The IR2109STR features include a high-voltage capability of up to 600V, providing the necessary robustness for handling high switching energies. It also boasts a unique floating channel designed for bootstrap operation as high as 600V, accommodating both high-side and low-side switching. This IC ensures efficient switching performance with its matched propagation delay times and under-voltage lockout for both channels, enhancing overall system safety and performance.
IR2109STR Applications
- Motor Drives: Utilizes the IR2109STR for efficient control of MOSFETs and IGBTs in motor drive circuits, ensuring smooth and reliable operation in appliances and industrial equipment.
- Power Supplies: Critical in switching power supplies where the IR2109STR drives half-bridge architectures, contributing to stable and efficient power conversion.
- Inverters: Key component in solar inverters and UPS systems, where it enhances power processing efficiency and reliability during the conversion of DC to AC power.
- Electric Vehicles: Applied in the propulsion and charging systems of electric vehicles, offering high efficiency and robust performance under varying electrical loads.
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